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| SMD Efficient Fast Recovery Rectifier CEFM101-G Thru CEFM105-G (RoHS Device) Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp Features: Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Built-in strain relief Super fast recovery time for high efficient Low forward voltage drop 0.110 (2.80) 0.094 (2.40) 0.071 (1.80) 0.055 (1.40) MINI SMA 0.161 (4.10) 0.146 (3.70) 0.012 (0.30) Typ. Mechanical Data: Case: Mini-SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.04 gram 0.063 (1.60) 0.055 (1.40) 0.035 (0.90) Typ. 0.035 (0.90) Typ. Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics: Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Average Forward Current Max. Instantaneous Forward Voltage at 1.0A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature Symbol CEFM101-G 50 50 35 CEFM102-G CEFM103-G CEFM104-G CEFM105-G 100 100 70 200 200 140 400 400 280 600 600 420 Unit V V V VRRM VDC VRMS IFSM Io VF Trr IR R JL 30 A 1.0 0.875 25 1.1 35 1.25 50 A V nS uA o C/W o o 5.0 250 42 -55 to +155 -55 to +150 Tj TSTG C C Note1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas. "-G" suffix designates RoHS compliant Version www.comchiptech.com Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFM101-G thru CEFM105-G) Fig. 1 - Reverse Characteristics 100 10 Fig.2 - Forward Characteristics CEFM101-G-103-G Forward Current (A) Tj=125 C Reverse current (uA) 10 1.0 CEFM104-G 1.0 Tj=75 C 0.1 CEFM105-G 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0.1 Tj=25 C 0. 01 0 0.001 15 30 45 60 75 90 105 120 135 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3 - Junction Capacitance 35 30 Fig.4 - Non Repetitive Forward Surge Curre 50 8.3mS Single Half Sine Wave JEDEC methode Peak Surge Forward Current (A) f=1MHz and applied 4VDC reverse voltage Tj=25 C Junction Capacitance (pF) 40 25 20 30 Tj=25 C 20 CEFM101-103 15 10 5 0 CEFM104-105 10 0 0.01 0.1 1.0 10 100 1 5 10 50 1 00 Reverse Voltage (V) Number of Cycles at 60Hz Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 1.4 Average Forward Current ( A ) trr | | | | | | | | 1.2 1.0 0.8 0.6 0.4 0.2 00 (+) 25Vdc (approx.) () 1 NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) "-G" suffix designates RoHS compliant Version www.comchiptech.com Page2 |
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